OASIS® is a Registered Trademark of Thomas Grebinski
14 nm 8-CORE finFET MERCHANT CPU STRESS TEST CASE
A preliminary version of a 14 nm finFET eight-core commercial CPU synthetic design/stress test case is available for download now on the Yotta FTP site. This is intended to be similar to a high-end Intel or AMD processor chip.
18 nm drawn gate length
128 nm SRAM contacted gate pitch
130 nm by 600 nm single-port SRAM core bit cell size
130 nm by 920 nm two-port SRAM core bit cell size
192 nm by 1240 nm three-port SRAM core bit cell size
two layers of local interconnect
six layers of metal
20 nm fin pitch
self-aligned double patterning (SADP) for fins
1-D gate layer
Each processor core has 3-port SRAM for the level 1 cache and register blocks, plus 2-port SRAM for the level 2 cache. Additionally, there is 1-port level 3 cache SRAM around the perimeter of the die. The overall design is about 12,212.7 microns wide and 11,319.6 microns high.
The family of 14 nm finFET design rules used for this design has an 18 nm drawn gate length, a 64 nm theoretical contacted gate pitch, one layer of local interconnect, six metal layers, 64 nm routing pitches for lower metal layers, and 84 nm routing pitches for upper metal layers (metal 4 and up).
All transistor gates are vertical; only gate layer routing within standard cells or SRAM circuits can be horizontal.
Design rule variants in this family can have 1-D routing on any subset of gate or routing layers (except metal 1), or diffraction gratings with blockage or cut masks on any subset of gate or routing layers. Contact Yotta Data Sciences for more information or to request a demonstration file using a particular variant.